doc.# dsfp-tn0110 c080813 tn0110 features ? low threshold - 2.0v max. ? high input impedance ? low input capacitance - 50pf typical ? fast switching speeds ? low on-resistance ? free from secondary breakdown ? low input and output leakage applications ? logic level interfaces C ideal for ttl and cmos ? solid state relays ? battery operated systems ? photo voltaic drives ? analog switches ? general purpose line drivers ? telecom switches general description this low threshold, enhancement-mode (normally-off) transistor utilizes a vertical dmos structure and supertexs well-proven, silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coeffcient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. n-channel enhancement-mode vertical dmos fet yy = year sealed ww = week sealed = ?green? packaging s itn 0 110 yyww product marking package may or may not include the following marks: si or absolute maximum ratings parameter value drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 o c to +150 o c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. to-92 gate source drain to-92 pin confguration typical thermal resistance package ja to-92 132 o c/w ordering information part number package option packing tn0110n3-g to-92 1000/bag tn0110n3-g p002 to-92 2000/reel tn0110n3-g p003 tn0110n3-g p005 tn0110n3-g p013 tn0110n3-g p014 -g denotes a lead (pb)-free / rohs compliant package. contact factory for wafer / die availablity. devices in wafer / die form are lead (pb)-free / rohs compliant. product summary bv dss /bv dgs r ds(on) (max) i d(on) (min) v gs(th) (max) 100v 3.0 2.0a 2.0v supertex inc. supertex inc. www .supertex.com
2 doc.# dsfp-tn0110 c080813 tn0110 electrical characteristics (t a = 25 o c unless otherwise specifed) sym parameter min typ max units conditions bv dss drain-to-source breakdown voltage 100 - - v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 0.6 - 2.0 v v gs = v ds , i d = 0.5ma v gs(th) change in v gs(th) with temperature - -3.2 -5.0 mv/ o c v gs = v ds , i d = 1.0ma i gss gate body leakage - - 100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - 10 a v gs = 0v, v ds = max rating - - 500 a v gs = 0v, v ds = 0.8 max rat- ing, t a = 125c i d(on) on-state drain current 0.75 1.4 - a v gs = 5.0v, v ds = 25v 2.0 3.4 - v gs = 10v, v ds = 25v r ds(on) static drain-to-source on-state resistance - 2.0 4.5 v gs = 4.5v, i d = 250ma - 1.6 3.0 v gs = 10v, i d = 500ma r ds(on) change in r ds(on) with temperature - 0.6 1.1 %/ o c v gs = 10v, i d = 500ma g fs forward transductance 225 400 - mmho v ds = 25v, i d = 500ma c iss input capacitance - 50 60 pf v gs = 0v, v ds = 25v, f = 1.0mhz c oss common source output capacitance - 25 35 c rss reverse transfer capacitance - 4.0 8.0 t d(on) turn-on delay time - 2.0 5.0 ns v dd = 25v, i d = 1.0a, r gen = 25 t r rise time - 3.0 5.0 t d(off) turn-off delay time - 6.0 7.0 t f fall time - 3.0 6.0 v sd diode forward voltage drop 1.0 1.5 v v gs = 0v, i sd = 500ma t rr reverse recovery time - 400 - ns v gs = 0v, i sd = 500ma notes: 1. all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. switching waveforms and test circuit 90% 10% 90% 90% 10% 10% pulse generator vdd r l output d.u.t. t (on) t d(on) t (off) t d(off) t r input input output 10v vdd r gen 0v 0v t f notes: ? i d (continuous) is limited by max rated t j . thermal characteristics package i d (continuous) ? i d (pulsed) power dissipation @t c = 25 o c i dr ? i drm to-92 350ma 2.0a 1.0w 350ma 2.0a supertex inc. www .supertex.com
3 doc.# dsfp-tn0110 c080813 tn0110 typical performance curves output characteristics 5.0 4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 v ds (volts) i d (amperes) saturation characteristics 0 2.0 4.0 6.0 8.0 10 maximum rated safe operating area 1.0 10 100 1000 10 1.0 0.1 0.01 v ds (volts) thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 t p (seconds) transconductance vs. drain current 0.5 0.4 0.3 0.2 0.1 0 0 0.6 1.2 1.8 2.4 3.0 g fs (siemens) i d (amperes) power dissipation vs. case temperature 0 25 50 75 100 125 150 2.0 1.0 0 t c ( o c) p d (watts) v ds = 25v to-92 to-92 t c = 25 o c p d = 1w to-92 (dc) to-92 (pulsed) 8v 6v 4v 2v t a = -55 o c v gs = 10v t c = 25 o c v ds (volts) 8v 6v 4v 2v v gs = 10v i d (amperes) t a = 25 o c t a = 150 o c i d (amperes) 5.0 4.0 3.0 2.0 1.0 0 supertex inc. www .supertex.com
4 doc.# dsfp-tn0110 c080813 tn0110 typical performance curves (cont.) gate drive dynamic characteristic s q g (nanocoulombs ) v gs (volts) v gs(th) (normalized) r ds(on) (normalized) v (th) and r ds variation with temperatur e on-resistance vs. drain current i d (amperes) r ds(on) (ohms) bv dss variation with temperatur e bv dss (normalized) t j ( o c) transfer characteristic s v gs (volts) i d (amperes) capacitance vs. drain-to-source voltage 100 75 50 25 0 c (picofarads) v ds (volts) 0 10 20 30 40 0 2.0 4.0 6.0 8.0 10 3.0 2.4 1.8 1.2 0.6 0 -50 0 50 100 150 1.3 1.2 1.1 1.0 0.9 0.8 5.0 4.0 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 1.4 1.2 1.0 0.8 0.6 0.4 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 -50 0 50 100 150 f = 1.0mhz 50pf v gs = 5.0v v ds = 25v t a = -55 o c 25 o c 150 o c v (th) @ 0.5ma r ds(on) @ 10v, 0.5a c iss c oss c rss v ds = 10v 55pf v gs = 10v t j ( o c) v ds = 40v 1.4 1.2 1.0 0.8 0.6 0.4 supertex inc. www .supertex.com
5 tn0110 (the package drawing(s) in this data sheet may not refect the most current specifcations. for the latest package outline information go to http://www.supertex.com/packaging.html .) doc.# dsfp-tn0110 c080813 3-lead to-92 package outline (n3) symbol a b c d e e1 e e1 l dimensions (inches) min .170 .014 ? .014 ? .175 .125 .080 .095 .045 .500 nom - - - - - - - - - max .210 .022 ? .022 ? .205 .165 .105 .105 .055 .610* jedec registration to-92. * this dimension is not specifed in the jedec drawing. ? this dimension differs from the jedec drawing. drawings not to scale. supertex doc.#: dspd-3to92n3, version e041009. seating plane 1 2 3 front v iew side v iew bottom v iew e1 e d e1 l e c 1 2 3 b a supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate ?product liability indemnification insurance agreement.? supertex inc. does not assume responsibility for use of devices described, and limits its liabilit y to the replacement of the devices determined defective due to workmanship. no responsibility is assumed for possible omissions and inaccuracies. circuitry and specifications are subject to change without notice. for the latest product specifications refer to the supertex inc. (website: http//www .supertex.com) ?2013 supertex inc. all rights reserved. unauthorized use or reproduction is prohibited. supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
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